Controlling the conductivity of amorphous LaAlO3/SrTiO3 interfaces by in-situ application of an electric field during fabrication

被引：12

作者：

Trier, F. ^{[1
]}

Amoruso, S. ^{[2
,3
]}

Christensen, D. V. ^{[1
]}

Sambri, A. ^{[2
,3
]}

Chen, Y. Z. ^{[1
]}

Wang, X. ^{[2
,3
]}

Stamate, E. ^{[1
]}

Bruzzese, R. ^{[2
,3
]}

Pryds, N. ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-4000 Roskilde, Denmark

[2] CNR SPIN, I-80125 Naples, Italy

[3] Complesso Univ Monte St Angelo, Dipartimento Sci Fis, I-80125 Naples, Italy

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

PULSED-LASER DEPOSITION; THIN-FILMS; OXIDE; TEMPERATURE; GAS;

D O I：

10.1063/1.4815989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous-LaAlO3/SrTiO3 interfaces present metallic conductivity similar to those found in their all-crystalline counterparts. Here, the conductivity of amorphous-LaAlO3/SrTiO3 interfaces is modified by an external electric field applied in-situ with a biased truncated cone electrode (-10 V <= V-bias <= 20 V) during film growth. By modulating the charge balance of the arriving plasma species, interfacial conduction of the amorphous-LaAlO3/SrTiO3 heterostructures shifts from metallic to insulating via a semiconducting-like characteristic transport mode. This remarkable behavior is explained by a modification of the Al-ion flux impinging the SrTiO3 surface, which alters the amount of near-interface oxygen vacancies being formed at the SrTiO3 surface. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 31 条

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