Degradation in organic light-emitting devices (OLEDs) is generally driven by reactions involving excitons and polarons. Accordingly, a common design strategy to improve OLED lifetime is to reduce the density of these species by engineering an emissive layer architecture to achieve a broad exciton recombination zone. Here, the effect of exciton density on device degradation is analyzed in a mixed host emissive layer (M-EML) architecture which exhibits a broad recombination zone. To gain further insight into the dominant degradation mechanism, losses in the exciton formation efficiency and photoluminescence (PL) efficiency are decoupled by tracking the emissive layer PL during device degradation. By varying the starting luminance and M-EML thickness, the rate of PL degradation is found to depend strongly on recombination zone width and hence exciton density. In contrast, losses in the exciton formation depend only weakly on the recombination zone, and thus may originate outside of the emissive layer. These results suggest that the lifetime enhancement observed in the M-EML architectures reflects a reduction in the rate of PL degradation. Moreover, the varying roles of excitons and polarons in degrading the PL and exciton formation efficiencies suggest that kinetically distinct pathways drive OLED degradation and that a single degradation mechanism cannot be assumed when attempting to model the device lifetime. This work highlights the potential to extract fundamental insight into OLED degradation by tracking the emissive layer PL during lifetime testing, while also enabling diagnostic tests on the root causes of device instability.
机构:
Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South KoreaKorea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Chin, BD
;
Suh, MC
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机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Suh, MC
;
Kim, MH
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机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Kim, MH
;
Lee, ST
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机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Lee, ST
;
Kim, HD
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机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Kim, HD
;
Chung, HK
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机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USAUniv Michigan, Dept Phys, Ann Arbor, MI 48109 USA
Coburn, Caleb
;
Forrest, Stephen R.
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机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USAUniv Michigan, Dept Phys, Ann Arbor, MI 48109 USA
机构:
Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South KoreaKorea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Chin, BD
;
Suh, MC
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Suh, MC
;
Kim, MH
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Kim, MH
;
Lee, ST
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Lee, ST
;
Kim, HD
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
Kim, HD
;
Chung, HK
论文数: 0引用数: 0
h-index: 0
机构:Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea
机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USAUniv Michigan, Dept Phys, Ann Arbor, MI 48109 USA
Coburn, Caleb
;
Forrest, Stephen R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USAUniv Michigan, Dept Phys, Ann Arbor, MI 48109 USA