High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

被引：23

作者：

Donoval, D. ^{[2
]}

Florovic, M. ^{[2
]}

Gregusova, D. ^{[1
]}

Kovac, J. ^{[2
]}

Kordos, P. ^{[1
,2
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84239 Bratislava, Slovakia

[2] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava, Slovakia

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 10期

关键词：

D O I：

10.1016/j.microrel.2008.04.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performance of AlGaN/GaN HFETs and Al2O3/AlGaN/GaN MOSHFETs at the elevated temperatures up to 425 degrees C was investigated. Static Output and transfer characteristics were measured and the saturation drain Current, the peak transconductance and the series conductance as a function of temperature were evaluated. All these characteristic features of HFETs and MOSHFETs decreased with increased temperature. At 425 degrees C the devices exhibited similar to 30% of their saturation drain current, peak transconductance and series conductance evaluated at room temperature. The device performance at elevated temperatures follows exactly the T-x dependence with a power x = - 1.5. This indicates that the temperature dependence of the mobility of channel electrons due to phonon scattering is the predominant effect describing high-temperature performance of AlGaN/GaN HFETs and MOSHFETs. (C) 2008 Elsevier Ltd, All rights reserved.

引用

页码：1669 / 1672

页数：4

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