Long afterglow characteristics of thin film phosphor fabricated by laser ablation

被引：26

作者：

Sato, K. ^{[1
]}

Komuro, S. ^{[1
]}

Morikawa, T. ^{[1
]}

Aizawa, H. ^{[1
]}

Katsumata, T. ^{[1
]}

Harako, S. ^{[2
]}

Zhao, X. ^{[2
]}

机构：

[1] Toyo Univ, Fac Engn, Kawagoe, Saitama 3508585, Japan

[2] Tokyo Univ Sci, Shinjuku Ku, Tokyo 1628601, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Doping; X-ray diffraction; Laser epitaxy; Physical vapor deposition processes; Rare earth compounds; Phosphors; Optical fiber devices;

D O I：

10.1016/j.jcrysgro.2004.11.203

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Long afterglow phosphorescent SrAl2O4:Eu,Dy thin films have been fabricated on Si substrate by laser ablation. The thin film phosphors show the intense green emission near 520 nm, and additional emissions near 390 nm and near 450 nm that are originating from 5d-4f transition in Eu2+ ions doped in the thin films. The afterglow intensity at 520 nm of the thin film phosphors was detected over 20 min later, after excitation was removed. The afterglow characteristics is almost the same between in the SrAl2O4:Eu,Dy thin film phosphors and the SrAl2O4:Eu,Dy bulk phosphors. Then, the long afterglow characteristics are interpreted by the hole trapping due to the Dy3+ ions added as the auxiliary activator doped into the SrAl2O4 thin films. (C) 2004 Elsevier B. V. All rights reserved.

引用

页码：E1137 / E1141

页数：5

共 10 条

[1] Long afterglow phosphorescent sensor materials for fiber-optic thermometer [J].