Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses

被引:35
作者
Ielmini, Daniele [1 ]
Boniardi, Mattia
机构
[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
关键词
antimony compounds; chalcogenide glasses; crystallisation; germanium compounds; glass transition; tellurium compounds; PHASE-CHANGE MEMORIES; AMORPHOUS TE ALLOYS; MEYER-NELDEL RULE; GE2SB2TE5; FILMS; DATA-RETENTION; RESISTANCE; DRIFT; RELIABILITY; NONVOLATILE; NUCLEATION;
D O I
10.1063/1.3094916
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural stability of amorphous chalcogenides used in electrical and optical phase-change devices is critically affected by structural relaxation (SR) and crystallization. We studied the temperature activation of SR and crystallization in amorphous Ge(2)Sb(2)Te(5). We demonstrate that SR and crystallization coherently obey the same Meyer-Neldel (MN) rule, evidencing the key role of many-body thermal excitation in these transformations. The different activation energies for SR and crystallization are discussed based on the strength and number of bonds to be rearranged during the transitions. The MN rule provides a straightforward explanation of the unphysical pre-exponential times (10(-24)-10(-22) s) observed in chalcogenide glasses.
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页数:3
相关论文
共 32 条
[1]   MANY-BODY NATURE OF THE MEYER-NELDEL COMPENSATION LAW FOR DIFFUSION [J].
BOISVERT, G ;
LEWIS, LJ ;
YELON, A .
PHYSICAL REVIEW LETTERS, 1995, 75 (03) :469-472
[2]   DEFECT RELAXATION IN AMORPHOUS-SILICON - STRETCHED EXPONENTIALS, THE MEYER-NELDEL RULE, AND THE STAEBLER-WRONSKI EFFECT [J].
CRANDALL, RS .
PHYSICAL REVIEW B, 1991, 43 (05) :4057-4070
[3]   CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1795-1804
[4]   Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy [J].
Först, M ;
Dekorsy, T ;
Trappe, C ;
Laurenzis, M ;
Kurz, H ;
Béchevet, B .
APPLIED PHYSICS LETTERS, 2000, 77 (13) :1964-1966
[5]   Size-dependent crystallization of Si nanoparticles [J].
Hirasawa, M ;
Orii, T ;
Seto, T .
APPLIED PHYSICS LETTERS, 2006, 88 (09)
[6]   Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation [J].
Ielmini, D. ;
Lavizzari, S. ;
Sharma, D. ;
Lacaita, A. L. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :939-+
[7]   Switching and programming dynamics in phase-change memory cells [J].
Ielmini, D ;
Mantegazza, D ;
Lacaita, AL ;
Pirovano, A ;
Pellizzer, F .
SOLID-STATE ELECTRONICS, 2005, 49 (11) :1826-1832
[8]   Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5 [J].
Ielmini, D. ;
Lavizzari, S. ;
Sharma, D. ;
Lacaita, A. L. .
APPLIED PHYSICS LETTERS, 2008, 92 (19)
[9]  
IELMINI D, 2008, P IRPS, P597
[10]   Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices [J].
Ielmini, Daniele ;
Zhang, Yuegang .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)