Investigation of Characteristics of Al2O3/n-In x Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures

被引：2

作者：

Trinh, Hai-Dang ^{[1
]}

Lin, Yueh-Chin ^{[1
]}

Kuo, Chien-I ^{[1
]}

Chang, Edward Yi ^{[1
,2
]}

Hong-Quan Nguyen ^{[1
]}

Wong, Yuen-Yee ^{[1
]}

Yu, Chih-Chieh ^{[3
]}

Chen, Chi-Ming ^{[4
]}

Chang, Chia-Yuan ^{[4
]}

Wu, Jyun-Yi ^{[4
]}

Chiu, Han-Chin ^{[4
]}

Yu, Terrence ^{[4
]}

Chang, Hui-Cheng ^{[4
]}

Tsai, Joseph ^{[4
]}

Hwang, David ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Instrument Technol Res Ctr, Hsinchu 30010, Taiwan

[4] Taiwan Semicond Mfg Co Ltd, Hsinchu 30010, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 08期

关键词：

ALD Al2O3; surface treatment; InGaAs; InAs; MOSCAPs; INTERFACIAL CHEMISTRY;

D O I：

10.1007/s11664-013-2616-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.

引用

页码：2439 / 2444

页数：6

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