Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

被引：7

作者：

Abderrahmane, A. ^{[1
]}

Koide, S. ^{[1
]}

Tahara, T. ^{[1
]}

Sato, S. ^{[3
]}

Ohshima, T. ^{[3
]}

Okada, H. ^{[1
,2
]}

Sandhu, A. ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan

[3] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

IRAGO CONFERENCE 2012 | 2013年 / 433卷

关键词：

2-DIMENSIONAL ELECTRON-GAS; TRANSPORT;

D O I：

10.1088/1742-6596/433/1/012011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low temperature Hall effect measurements were carried on AlGaN/GaN micro-Hall effect sensors before and after irradiation with 380 keV and fluence of 10(14) protons/cm(2) protons. The sheet electron density after irradiation did not show significant changes but there was a dramatic decrease in the electron mobility of the heterostructures. Prior to irradiation, the observation of well-defined Landau plateaus in the Hall resistance and Shubnikov-de Haas oscillations (SdH) at 4.5 T was indicative of the high quality the heterojunction confining the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface of micro-Hall effect sensors. In contrast, the Landau plateaus disappeared after irradiation and the threshold magnetic field required for the observation of the SdH increased, which was accompanied by a decrease of the electron mobility. Temperature dependent magnetoresistance measurements were used to deduce the effective mass and the quantum scattering time before irradiation. A negative magnetoresistance was observed at low magnetic fields which is related to weak localization and parabolic negative magnetoresistance attributed to electron-electron interaction in both samples.

引用

页数：8

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