The Characteristics of ZrO2 Charge Trapping Layers by Nitrogen Incorporation in Nonvolatile Memory Applications

被引：0

作者：

Kao, Chyuan-Haur ^{[1
]}

Lin, Chih-Ju ^{[1
]}

Wang, Hsin-Yuan ^{[1
]}

Chen, Szu-Chien ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Kwei Shan Tao Yuan 333, Taiwan

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.

引用

页码：1160 / 1162

页数：3

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