Production and annealing of electron irradiation damage in ZnO

被引：307

作者：

Look, DC ^{[1
]}

Reynolds, DC

Hemsky, JW

Jones, RL

Sizelove, JR

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-energy (> 1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [000 (1) over bar] direction (O face). The major annealing stage occurs at about 300-325 degrees C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more "radiation hard" than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites. (C) 1999 American Institute of Physics. [S0003-6951(99)04232-1].

引用

页码：811 / 813

页数：3

共 13 条

[1]

Agullo-Lopez F., 1988, POINT DEFECTS MAT

[2] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[3]

KELLY BT, 1966, IRRADIATION DAMAGE S, P181

[4]

Kroger F.A, 1974, The Chemistry of Imperfect Crystals, V2

[5] Electrical properties of bulk ZnO [J].

Look, DC ;

Reynolds, DC ;

Sizelove, JR ;

Jones, RL ;

Litton, CW ;

Cantwell, G ;

Harsch, WC .

SOLID STATE COMMUNICATIONS, 1998, 105 (06) :399-401

[6] Residual native shallow donor in ZnO [J].

Look, DC ;

Hemsky, JW ;

Sizelove, JR .

PHYSICAL REVIEW LETTERS, 1999, 82 (12) :2552-2555

[7] Growth of p-type zinc oxide films by chemical vapor deposition [J].

Minegishi, K ;

Koiwai, Y ;

Kikuchi, Y ;

Yano, K ;

Kasuga, M ;

Shimizu, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A) :L1453-L1455

[8] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[9] Neutral-donor-bound-exciton complexes in ZnO crystals [J].

Reynolds, DC ;

Look, DC ;

Jogai, B ;

Litton, CW ;

Collins, TC ;

Harsch, W ;

Cantwell, G .

PHYSICAL REVIEW B, 1998, 57 (19) :12151-12155

[10] Optically pumped ultraviolet lasing from ZnO [J].

Reynolds, DC ;

Look, DC ;

Jogai, B .

SOLID STATE COMMUNICATIONS, 1996, 99 (12) :873-875

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