High-efficiency BIRA for embedded memories with a high repair rate and low area overhead

被引：3

作者：

Lee, Joohwan ^{[1
,2
]}

Park, Kihyun ^{[1
,2
]}

Kang, Sungho ^{[1
,3
]}

机构：

[1] Yonsei Univ, Grad Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Yonsei Univ, ASIC Res Ctr, Seoul 120749, South Korea

[3] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2012年 / 12卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Built-in redundancy analysis; repair rate; area overhead; embedded memory;

D O I：

10.5573/JSTS.2012.12.3.266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-efficiency built-in redundancy analysis (BIRA) is presented. The proposed BIRA uses three techniques to achieve a high repair rate using spare mapping registers with adjustable fault tags to reduce area overhead. Simulation results show that the proposed BIRA is a reasonable solution for embedded memories.

引用

页码：266 / 269

页数：4

共 8 条

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