Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM

被引:6
作者
Dasilva, Yadira Arroyo Rojas [1 ]
Erni, Rolf [1 ]
Isa, Fabio [1 ,2 ,3 ]
Isella, Giovanni [4 ,5 ,6 ]
von Kanel, Hans [1 ,2 ]
Groning, Pierangelo [7 ]
Rossell, Marta D. [1 ]
机构
[1] Empa, Swiss Fed Labs Mat Sci & Technol, Elect Microscopy Ctr, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
[2] Swiss Fed Inst Technol, Solid State Phys Lab, Otto Stern Weg 1, CH-8093 Zurich, Switzerland
[3] CSIRO Mfg, 36 Bradfield Rd, Lindfield, NSW 2070, Australia
[4] Politecn Milan, L NESS, Via Anzani 42, I-22100 Como, Italy
[5] Politecn Milan, Dept Phys, Via Anzani 42, I-22100 Como, Italy
[6] IFN CNR, Via Anzani 42, I-22100 Como, Italy
[7] Empa, Swiss Fed Labs Mat Sci & Technol, Dept Adv Mat & Surfaces, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
基金
瑞士国家科学基金会;
关键词
Grain boundaries; Twin boundaries; Triple junctions; ELECTRONIC-STRUCTURE; DIAMOND; TILT; SEMICONDUCTORS; DEFECTS; SILICON; DISLOCATION; SI; ENERGIES; SIGMA-3;
D O I
10.1016/j.actamat.2019.01.031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The atomic structure of grain boundaries in Ge micro-crystals grown on Si pillars for the fabrication of a monolithically integrated X-ray detector was studied by high-resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Three different boundaries are found in Ge: Sigma 3{111} coherent twin boundaries, Sigma 3{112} incoherent twin boundaries, and Sigma 9{122} and Sigma 27{552} grain boundaries. They are described using the structural unit models containing single columns. Remarkably, we find for the first time a Sigma 3{112} incoherent twin boundary exhibiting two different atomic structures; one symmetric and one asymmetric. Their co-occurrence is explained by the presence of a small step in the boundary plane and the introduction of dislocations. Likewise, the atomic structure of junctions formed by the interaction of twin boundaries which result in Sigma 9{122} and Sigma 27{552} grain boundaries is also revealed. Geometrical phase analysis is applied to map the strain fields at two triple junctions and to uncover the position of the dislocations. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:159 / 166
页数:8
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