Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

被引：22

作者：

Cho, Chu-Young ^{[1
]}

Choe, Minhyeok ^{[1
]}

Lee, Sang-Jun ^{[1
]}

Hong, Sang-Hyun ^{[1
]}

Lee, Takhee ^{[2
]}

Lim, Wantae ^{[3
]}

Kim, Sung-Tae ^{[3
]}

Park, Seong-Ju ^{[1
,4
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Samsung Elect Co Ltd, Suwon 443742, South Korea

[4] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

P-TYPE GAN; RAMAN-SPECTROSCOPY; ELECTRODES; CONTACT; FILMS;

D O I：

10.1063/1.4795502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795502]

引用

页数：5

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