] Quaternary nitride heterostructure field effect transistors

被引：12

作者：

Khoshroo, L. Rahimzadeh ^{[1
]}

Ketteniss, N. ^{[1
]}

Mauder, C. ^{[1
]}

Behmenburg, H. ^{[1
]}

Woitok, J. F. ^{[2
]}

Booker, I. ^{[1
]}

Gruis, J. ^{[1
]}

Heuken, M. ^{[1
,3
]}

Vescan, A. ^{[1
]}

Kalisch, H. ^{[1
]}

Jansen, R. H. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Theoret Elektrotech, Kackertstr 15-17, D-52074 Aachen, Germany

[2] PANalytical BV, Panama City, FL USA

[3] AIXTRON AG, Aachen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

AlInGaN/AlN/GaN; MOVPE; interface formation; structure; electrical properties; field effect transistor; GAN;

D O I：

10.1002/pssc.200983614

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on AlInGaN/AlN/GaN heterostructures on 2 '' sapphire substrates with different compositions grown by metal organic vapor phase epitaxy (MOVPE). High-resolution X-Ray diffraction (HRXRD) measurements allowed a reliable thickness determination and indicated sharp interfaces. HRXRD mappings showed good quality and single-phase growth in all barrier layers. At room temperature, the samples yielded average two-dimensional carrier densities in the range of 1.51 -1.81 x 10(13) cm(-2), systematically decreasing with rising GaN content in the barrier layer. Room temperature (RT) mobilities up to 1790 cm(2)/Vs were measured. When cooled to 77 K, the sheet resistivity decreased to 37% of the RT value at no noticeable change of n(s). Atomic force microscopy reveals very low roughness and improved step-flow morphology. Further processing yielded high electron mobility transistors exhibiting a transconductance of around 265 mS/mm for all samples and drain currents ranging from 848 mA/mm to 1051 mA/mm at 0 V gate voltage (L-g=1 mu m). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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