Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

被引：116

作者：

Aikawa, Shinya ^{[1
]}

Nabatame, Toshihide ^{[2
,3
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, MANA Foundry, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, MANA Adv Device Mat Grp, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 17期

关键词：

GA-ZN-O; ROOM-TEMPERATURE; HIGH-MOBILITY; CARRIER TRANSPORT; TFTS; CRYSTALLINE;

D O I：

10.1063/1.4822175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InOx-based semiconductors doped with TiO2, WO3, or SiO2. Even at low-dopant densities, the electrical properties of the film strongly depend on the dopant used. We found that this dependence could be reasonably explained by differences in the bond-dissociation energy of the dopants. By incorporating a dopant with a higher bond-dissociation energy, the film became less sensitive to the partial pressure of oxygen used during sputtering and remained electrically stable upon thermal annealing. Thus, choosing a dopant with an appropriate bond-dissociation energy is important when fabricating stable metal-oxide TFTs for flat-panel displays. (C) 2013 AIP Publishing LLC.

引用

页数：5

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