Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

被引：116

作者：

Aikawa, Shinya ^{[1
]}

Nabatame, Toshihide ^{[2
,3
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, MANA Foundry, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, MANA Adv Device Mat Grp, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 17期

关键词：

GA-ZN-O; ROOM-TEMPERATURE; HIGH-MOBILITY; CARRIER TRANSPORT; TFTS; CRYSTALLINE;

D O I：

10.1063/1.4822175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InOx-based semiconductors doped with TiO2, WO3, or SiO2. Even at low-dopant densities, the electrical properties of the film strongly depend on the dopant used. We found that this dependence could be reasonably explained by differences in the bond-dissociation energy of the dopants. By incorporating a dopant with a higher bond-dissociation energy, the film became less sensitive to the partial pressure of oxygen used during sputtering and remained electrically stable upon thermal annealing. Thus, choosing a dopant with an appropriate bond-dissociation energy is important when fabricating stable metal-oxide TFTs for flat-panel displays. (C) 2013 AIP Publishing LLC.

引用

页数：5

共 37 条

[1] Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor [J].

Aikawa, Shinya ;

Darmawan, Peter ;

Yanagisawa, Keiichi ;

Nabatame, Toshihide ;

Abe, Yoshiyuki ;

Tsukagoshi, Kazuhito .

APPLIED PHYSICS LETTERS, 2013, 102 (10)

[2] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[5] Realization of In2O3 thin film transistors through reactive evaporation process [J].

Dhananjay ;

Chu, Chih-Wei .

APPLIED PHYSICS LETTERS, 2007, 91 (13)

[6] High-Mobility Thin-Film Transistors with Polycrystalline In-Ga-O Channel Fabricated by DC Magnetron Sputtering [J].

Ebata, Kazuaki ;

Tomai, Shigekazu ;

Tsuruma, Yuki ;

Iitsuka, Takashi ;

Matsuzaki, Shigeo ;

Yano, Koki .

APPLIED PHYSICS EXPRESS, 2012, 5 (01)

[7] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[8] Persistent photoconductivity in Hf-In-Zn-O thin film transistors [J].

Ghaffarzadeh, Khashayar ;

Nathan, Arokia ;

Robertson, John ;

Kim, Sangwook ;

Jeon, Sanghun ;

Kim, Changjung ;

Chung, U-In ;

Lee, Je-Hun .

APPLIED PHYSICS LETTERS, 2010, 97 (14)

[9] Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress [J].

Ghaffarzadeh, Khashayar ;

Nathan, Arokia ;

Robertson, John ;

Kim, Sangwook ;

Jeon, Sanghun ;

Kim, Changjung ;

Chung, U-In ;

Lee, Je-Hun .

APPLIED PHYSICS LETTERS, 2010, 97 (11)

[10] High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs [J].

Goncalves, G. ;

Barquinha, P. ;

Pereira, L. ;

Franco, N. ;

Alves, E. ;

Martins, R. ;

Fortunato, E. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (01) :II20-II22

← 1 2 3 4 →