A new model for enhancement-mode power pHEMT

被引：6

作者：

Wei, CJ ^{[1
]}

Tkachenko, YA ^{[1
]}

Bartle, D ^{[1
]}

机构：

[1] Alpha Ind Inc, Dept 780, Woburn, MA 01801 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 01期

关键词：

D O I：

10.1109/22.981246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optimum loading for a power enhancement-mode pseudomorphic high electron-mobility transistor (E-pHEMT) is determined by a systematic harmonic load-pull simulation. The simulation uses a modified Angelov-Parker model that can accurately predict de, small-signal RF, and power performance of the devices. The optimum second harmonic loading for a 2-mm device is found to be open circuit and the optimum third harmonic is at the third quadrant, which is about 1 angle 210degrees. The measured versus modeled results show very good agreement and, therefore, verify the model. The simulation predicts that as high as 80% power-added efficiency can be achieved for E-pHEMT under optimum source and load termination with harmonic tuning.

引用

页码：57 / 61

页数：5

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