Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

被引：2

作者：

Bisri, Satria Zulkarnaen ^{[1
]}

Takenobu, Taishi ^{[1
,2
]}

Yomogida, Yohei ^{[1
]}

Yamao, Takeshi ^{[3
]}

Yahiro, Masayuki ^{[4
]}

Hotta, Shu ^{[3
]}

Adachi, Chihaya ^{[4
]}

Iwasa, Yoshihiro ^{[1
,2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3300012, Japan

[3] Kyoto Inst Technol, Dept Polymer Sci & Engn, Kyoto 6068585, Japan

[4] Kyushu Univ, Ctr Future Chem, Fukuoka 8190395, Japan

来源：

ORGANIC OPTOELECTRONICS AND PHOTONICS III | 2008年 / 6999卷

关键词：

organic single crystal; ambipolar transistor; high luminescence; light emitting transistor; high current density;

D O I：

10.1117/12.781126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm(2) order. The development of ambipolar light emitting transistor based on high photoluminescent material, alpha,omega-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

引用

页数：10

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