Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

被引：7

作者：

Berthet, F. ^{[1
,2
]}

Guhel, Y. ^{[1
]}

Gualous, H. ^{[1
]}

Boudart, B. ^{[1
]}

Trolet, J. L. ^{[2
]}

Piccione, M. ^{[2
]}

Gaquiere, C. ^{[3
]}

机构：

[1] Univ Caen Basse Normandie, LUSAC, F-50130 Octeville, France

[2] EAMEA, F-50115 Cherbourg Armees, France

[3] IEMN, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期

关键词：

RELIABILITY; HFETS;

D O I：

10.1016/j.microrel.2012.07.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on an original method, which permits to change the trap effects on the dc electrical performances of AlGaN/GaN HEMTs. In fact, electrical traps induced by an OFF-stress state on AlGaN/GaN transistors can be strongly reduced by using low thermalized neutrons radiation fluence. We also highlight that a neutron irradiation induces the creation of electrical traps, which act as acceptor. As a result, the electrical behaviour of devices under OFF-state stress is totally different if the component is irradiated or not before the ageing test because electrical traps induced by OFF-state stress can compensate the electrical traps involved by neutron irradiation. To our knowledge, it is the first time that such observation was made. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2159 / 2163

页数：5

共 15 条

[1] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs [J].

Berthet, Fanny ;

Guhel, Yannick ;

Gualous, Hamid ;

Boudart, Bertrand ;

Trolet, Jean-Lionel ;

Piccione, Marc ;

Sbrugnera, Vanessa ;

Grimbert, Bertrand ;

Gaquiere, Christophe .

SOLID-STATE ELECTRONICS, 2012, 72 :15-21

[2] GaN HEMT reliability [J].

del Alamo, J. A. ;

Joh, J. .

MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) :1200-1206

[3] DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose [J].

Guhel, Y. ;

Boudart, B. ;

Gaquiere, C. ;

Vellas, N. ;

Trolet, J. L. ;

Piccione, M. .

ELECTRONICS LETTERS, 2010, 46 (09) :650-U73

[4]

Hsu SH, 2000, GAAS IC S MONT CA, P85

[5] Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates [J].

Kim, Byung-Jae ;

Kim, Hong-Yeol ;

Kim, Jihyun ;

Jang, Soohwan .

JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) :205-207

[6] Degradation characteristics of AlGaN/GaN high electron mobility transistors [J].

Kim, H ;

Tilak, V ;

Green, BM ;

Cha, HY ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :214-218

[7]

Kim H, 2001, PHYS STATUS SOLIDI A, V188, P203, DOI 10.1002/1521-396X(200111)188:1<203::AID-PSSA203>3.0.CO

[8]

2-C

[9]

Kim H, 2002, GAAS REL WORKSH MONT, P5

[10] Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs [J].

Malbert, N. ;

Labat, N. ;

Curutchet, A. ;

Sury, C. ;

Hoel, V. ;

de Jaeger, J. -C. ;

Defrance, N. ;

Douvry, Y. ;

Dua, C. ;

Oualli, M. ;

Bru-Chevallier, C. ;

Bluet, J. -M. ;

Chikhaoui, W. .

MICROELECTRONICS RELIABILITY, 2009, 49 (9-11) :1216-1221

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