Electron mobility in phosphorous doped {111} homoepitaxial diamond

被引：53

作者：

Pernot, J. ^{[1
,2
]}

Koizumi, S. ^{[3
]}

机构：

[1] CNRS, Inst NEEL, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble, France

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2969066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room temperature Hall electron mobility of phosphorous doped {111} homoepitaxial diamond is investigated experimentally and described theoretically for different doping and compensating center densities. The impurities mobility dependence is established. The mobility is found to be controlled by the lattice scattering mechanisms in low doped material (below 10(17) cm(-3)), by lattice and ionized impurity scattering for moderate doping level (10(17) cm(-3)< N(D)< 10(18) cm(-3)), and by neutral impurity scattering for highly doped material (above 10(18) cm(-3)). The mobility parameters required to simulate the electric characteristics of electronic devices between 300 and 500 K in a wide doping range are then determined. (C) 2008 American Institute of Physics.

引用

页数：3

共 50 条

[31] Selectively buried growth of heavily B doped diamond layers with step-free surfaces in N doped diamond (111) by homoepitaxial lateral growth [J].

Kobayashi, Kazuki ;

Zhang, Xufang ;

Makino, Toshiharu ;

Matsumoto, Tsubasa ;

Inokuma, Takao ;

Yamasaki, Satoshi ;

Nebel, Christoph E. ;

Tokuda, Norio .

APPLIED SURFACE SCIENCE, 2022, 593

[32] SURFACE ELECTRONIC PROPERTIES ON BORON DOPED (111) CVD HOMOEPITAXIAL DIAMOND FILMS AFTER OXIDATION TREATMENTS [J].

Ri, Sung-Gi ;

Okushi, Hideyo ;

Yamasaki, Satoshi .

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPL NO 28, 2010, 28 :49-54

[33] Kinetics and morphology of homoepitaxial CVD growth on diamond (100) and (111) [J].

Rawles, RE ;

Morris, WG ;

DEvelyn, MP .

DIAMOND FOR ELECTRONIC APPLICATIONS, 1996, 416 :13-18

[34] Microstructure evolution of boron doped homoepitaxial diamond films [J].

J Appl Phys, 1 (181)

[35] Microstructure evolution of boron doped homoepitaxial diamond films [J].

Brunet, F ;

Germi, P ;

Pernet, M ;

Deneuville, A ;

Gheeraert, E ;

Laugier, F ;

Burdin, M ;

Rolland, G .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) :181-186

[36] Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (111) diamond [J].

Yamada, Takatoshi ;

Nebel, Christoph E. ;

Somu, Kumaragurubaran ;

Shikata, Shin-ichi .

APPLIED SURFACE SCIENCE, 2008, 254 (23) :7921-7924

[37] Extreme dielectric strength in boron doped homoepitaxial diamond [J].

Volpe, Pierre-Nicolas ;

Muret, Pierre ;

Pernot, Julien ;

Omnes, Franck ;

Teraji, Tokuyuki ;

Koide, Yasuo ;

Jomard, Francois ;

Planson, Dominique ;

Brosselard, Pierre ;

Dheilly, Nicolas ;

Vergne, Bertrand ;

Scharnholz, Sigo .

APPLIED PHYSICS LETTERS, 2010, 97 (22)

[38] Light penetration depth dependence of photocarrier life time and the Hall effect in phosphorous-doped and boron-doped homoepitaxial CVD diamond films [J].

Murayama, Kazuro ;

Mizokawa, Ryo ;

Mori, Manami ;

Kato, Hiromitsu ;

Okushi, Hideyo ;

Yamasaki, Satoshi .

[39] Surface electronic properties on boron doped (111) CVD homoepitaxial. diamond films after oxidation treatments [J].

Ri, Sung-Gi ;

Takeuchi, Daisuke ;

Nebel, Christoph E. ;

Tokuda, Norio ;

Yamazaki, Yuichi ;

Yamasaki, Satoshi ;

Okushi, Hideyo .

[40] MULTIPHASE SURFACE MORPHOLOGIES OF DOPED HOMOEPITAXIAL DIAMOND FILMS [J].

MAGUIRE, HG ;

KAMO, M ;

LANG, HP ;

GUNTHERODT, HJ .

APPLIED SURFACE SCIENCE, 1994, 75 :144-150

← 1 2 3 4 5 →