Electron mobility in phosphorous doped {111} homoepitaxial diamond

被引：53

作者：

Pernot, J. ^{[1
,2
]}

Koizumi, S. ^{[3
]}

机构：

[1] CNRS, Inst NEEL, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble, France

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2969066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room temperature Hall electron mobility of phosphorous doped {111} homoepitaxial diamond is investigated experimentally and described theoretically for different doping and compensating center densities. The impurities mobility dependence is established. The mobility is found to be controlled by the lattice scattering mechanisms in low doped material (below 10(17) cm(-3)), by lattice and ionized impurity scattering for moderate doping level (10(17) cm(-3)< N(D)< 10(18) cm(-3)), and by neutral impurity scattering for highly doped material (above 10(18) cm(-3)). The mobility parameters required to simulate the electric characteristics of electronic devices between 300 and 500 K in a wide doping range are then determined. (C) 2008 American Institute of Physics.

引用

页数：3

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