W-band RF MEMS double and triple-stub impedance tuners

被引：25
作者：
Vähä-Heikkilä, T [1 ]
Varis, J [1 ]
Tuovinen, J [1 ]
Rebeiz, GM [1 ]
机构：
[1] Univ Michigan, Ann Arbor, MI 48109 USA
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
RF MEMS; impedance tuner; matching network; noise parameter; load-pull; on-wafer;
D O I：
10.1109/MWSYM.2005.1516774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and load-pull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2(11)) different impedances. Measured vertical bar Gamma(MAX)vertical bar for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
引用
收藏
页码：923 / 926
页数：4
相关论文
共 8 条
[1]   A wide-band on-wafer noise parameter measurement system at 50-75 GHz [J].
Kantanen, M ;
Lahdes, M ;
Vähä-Heikkilä, T ;
Tuovinen, J .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (05) :1489-1495
[2]   Low-loss analog and digital micromachined impedance tuners at the Ka-band [J].
Kim, HT ;
Jung, SW ;
Kang, KT ;
Park, JH ;
Kim, YK ;
Kwon, YW .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) :2394-2400
[3]  
Möttönen VS, 2004, 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, P921
[4]   Reconfigurable double-stub tuners using MEMS switches for intelligent RF front-ends [J].
Papapolymerou, J ;
Lange, KL ;
Goldsmith, CL ;
Malczewski, A ;
Kleber, J .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (01) :271-278
[5]  
Vähä-Heikkilä T, 2004, 34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, P1301
[6]   On-wafer noise-parameter measurements at W-band [J].
Vähä-Heikkilä, T ;
Lahdes, M ;
Kantanen, M ;
Tuovinen, J .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (06) :1621-1628
[7]  
VAHAHEIKKILA T, 2004, IN PRESS IEEE MI NOV
[8]  
VAHAHEIKKILA T, 2004, IEEE MTT S INT MICR, P729
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