Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

被引：16

作者：

Upadhyay, Bhanu B. ^{[1
]}

Takhar, Kuldeep ^{[1
]}

Jha, Jaya ^{[1
]}

Ganguly, Swaroop ^{[1
]}

Saha, Dipankar ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

SOLID-STATE ELECTRONICS | 2018年 / 141卷

关键词：

RF; HEMT; Plasma treatment; AlGaN/GaN; MOS-HEMT; PERFORMANCE; REDUCTION; LEAKAGE;

D O I：

10.1016/j.sse.2017.11.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate that N-2 and O-2 plasma treatment followed by rapid thermal annealing leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor. Both the source/drain access and gate regions respond positively improving the transistor characteristics albeit to different extents. Characterizations indicate that the surface show the characteristics of that of a higher band-gap material like AlxOy and GaxOy along with N-vacancy in the sub-surface region. The N-vacancy leads to an increased two-dimensional electron gas density. The formation of oxides lead to a reduced gate leakage current and surface passivation. The DC characteristics show increased transconductance, saturation drain current, ON/OFF current ratio, sub-threshold swing and lower ON resistance by a factor of 2.9, 2.0, 10(3.3), 2.3, and 2.1, respectively. The RF characteristics show an increase in unity current gain frequency by a factor of 1.7 for a 500 nm channel length device.

引用

页码：1 / 6

页数：6

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