In-situ observation of faceted growth of benzophenone single crystals

被引：8

作者：

Natarajan, V. ^{[1
]}

Arivanandhan, M. ^{[2
]}

Anandan, P. ^{[2
]}

Sankaranarayanan, K. ^{[3
]}

Ravi, G. ^{[3
]}

Inatomi, Y. ^{[4
]}

Hayakawa, Y. ^{[2
]}

机构：

[1] Dr Sivanthi Aditanar Coll Engn, Dept Phys, Tiruchendur, India

[2] Shizuoka Univ, Elect Res Inst, Naka Ku, Shizuoka 4228529, Japan

[3] Alagappa Univ, Dept Phys, Karaikkudi, Tamil Nadu, India

[4] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 144卷 / 03期

关键词：

Interfaces; Optical materials; Crystal growth; Crystallography; MORPHOLOGY; PHASE;

D O I：

10.1016/j.matchemphys.2014.01.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Melt growth of benzophenone was in-situ observed under various cooling rate and temperature gradient. The melt growth experiments were performed for various cooling rate of melt and various temperature gradients. The movement of growth interface with time was measured for various growth faces such as (001), (101) and (011) and the growth rates of the respective faces were calculated. It was found that the growth rate of all the faces increased with cooling rate of the melt. Steady state growth was observed in the experiments with low temperature gradient while, the steep gradient leads to unstable growth of crystal. The observed growth rate variation was explained using the attachment energy model. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：402 / 408

页数：7

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