Spin-Polarized Electron Injection into an InSb Semiconductor

被引：1
作者：
Viglin, N. A. [1 ]
Bebenin, N. G. [1 ]
机构：
[1] Russian Acad Sci, Ural Branch, Mikheev Inst Met Phys, Ekaterinburg 620108, Russia
来源：
PHYSICS OF METALS AND METALLOGRAPHY | 2018年 / 119卷 / 13期
基金：
俄罗斯基础研究基金会;
关键词：
spin injection; spin polarization; lateral structures; InSb; TRANSPORT; GENERATION; MILLIMETER; JUNCTION; BAND;
D O I：
10.1134/S0031918X18130136
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.
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页码：1289 / 1292
页数：4
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