Spin-Polarized Electron Injection into an InSb Semiconductor

被引：1

作者：

Viglin, N. A. ^{[1
]}

Bebenin, N. G. ^{[1
]}

机构：

[1] Russian Acad Sci, Ural Branch, Mikheev Inst Met Phys, Ekaterinburg 620108, Russia

来源：

PHYSICS OF METALS AND METALLOGRAPHY | 2018年 / 119卷 / 13期

基金：

俄罗斯基础研究基金会;

关键词：

spin injection; spin polarization; lateral structures; InSb; TRANSPORT; GENERATION; MILLIMETER; JUNCTION; BAND;

D O I：

10.1134/S0031918X18130136

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.

引用

页码：1289 / 1292

页数：4

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