Optical and interface properties of direct InP/Si heterojunction formed by corrugated epitaxial lateral overgrowth

被引：12

作者：

Omanakuttan, Giriprasanth ^{[1
]}

Martinez Sacristan, Oscar ^{[2
]}

Marcinkevicius, Saulius ^{[3
]}

Uzdavinys, Tomas Kristijonas ^{[3
]}

Jimenez, Juan ^{[2
]}

Ali, Hasan ^{[4
]}

Leifer, Klaus ^{[4
]}

Lourdudoss, Sebastian ^{[1
]}

Sun, Yan-Ting ^{[1
]}

机构：

[1] Royal Inst Technol KTH, Dept Appl Phys, Lab Semicond Mat, Electrum 229, S-16440 Kista, Sweden

[2] Univ Valladolid, Dept Fis Mat Condensada, GdS Optronlab Grp, Edificio LUCIA,Paseo Belen 19, Valladolid 47011, Spain

[3] Royal Inst Technol KTH, Dept Appl Phys, Unit Opt & Photon, Electrum 229, S-16440 Kista, Sweden

[4] Uppsala Univ, Dept Engn Sci, Appl Mat Sci, Box 534, S-75121 Uppsala, Sweden

来源：

OPTICAL MATERIALS EXPRESS | 2019年 / 9卷 / 03期

基金：

瑞典研究理事会;

关键词：

VAPOR-PHASE EPITAXY; GAAS SOLAR-CELLS; SI; SILICON; LUMINESCENCE; DEFECTS; LASERS;

D O I：

10.1364/OME.9.001488

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature cathodoluminescence, time-resolved photoluminescence and transmission electron microscopy. Compared to the defective seed InP layer on Si, higher intensity band edge emission in cathodoluminescence spectra and enhanced carrier lifetime of InP are observed above the CELOG InP/Si interface despite large lattice mismatch, which are attributed to the reduced threading dislocation density realized by the CELOG method. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：1488 / 1500

页数：13

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