Nanostructured thin manganite films in megagauss magnetic field

被引：40

作者：

Balevicius, S. ^{[1
]}

Zurauskiene, N. ^{[1
]}

Stankevic, V. ^{[1
]}

Kersulis, S. ^{[1
]}

Plausinaitiene, V. ^{[1
]}

Abrutis, A. ^{[2
]}

Zherlitsyn, S. ^{[3
]}

Herrmannsdoerfer, T. ^{[3
]}

Wosnitza, J. ^{[3
]}

Wolff-Fabris, F. ^{[3
]}

机构：

[1] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

[2] Vilnius State Univ, Fac Chem, LT-03225 Vilnius, Lithuania

[3] Helmholtz Zentrum Dresden Rossendorf, Hochfeld Magnetlabor Dresden HLD, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 09期

关键词：

MAGNETORESISTANCE; SENSORS;

D O I：

10.1063/1.4749820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the use of the colossal magnetoresistance (CMR) effect in manganites for the measurement of pulsed magnetic fields up to the megagauss limit. To increase the application range in a magnetic field, we fabricated nanostructured La-Sr-Mn-O films consisting of nanocrystallites cummulated into clusters separated by highly amorphous inter-cluster boundaries. We demonstrate that the CMR effect does not saturate in these films at 77K up to 91.4 T. Moreover, the magnetoresistance behavior at 290K shows that nanostructured manganite films are promising candidates for the development of magnetic field scalar sensors operating in wide field and temperature ranges. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749820]

引用

页数：4

共 14 条

[1]

[Anonymous], 2011, SCIENCEDAILY

[2]

[Anonymous], 2012, ScienceDaily

[3] Thin Film Manganite-Metal Interconnection and "Loop Effect" Studies in CMR-Based High Magnetic Field Sensors [J].