High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

被引：108

作者：

Choi, Woojin ^{[1
,2
]}

Seok, Ogyun ^{[1
,2
]}

Ryu, Hojin ^{[1
,2
]}

Cha, Ho-Young ^{[3
]}

Seo, Kwang-Seok ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Hongik Univ, Sch Elect & Elect Engn, Seoul 121791, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Dual gate insulator; GaN; hafnium oxide; metal-insulator-semiconductor high electron mobility transistors; (MIS-HEMTs); plasma enhanced atomic layer deposition (PEALD); RF-sputtering; silicon nitride;

D O I：

10.1109/LED.2013.2293579

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To fabricate gate recessed normally-off AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors, we have employed a novel SiNx/HfO2 dual gate insulator. A plasma enhanced atomic layer deposition (PEALD) technique was used for very thin high quality SiNx (5 nm) as an interfacial layer followed by RF-sputtered HfO2 as a high-k dielectric for the second gate insulator structure. The PEALD SiNx interfacial layer effectively suppresses the forward gate leakage current and the current collapse. We have achieved excellent characteristics such as large threshold voltage of 1.65 V, high breakdown voltage of 900 V, extremely small off-state drain leakage current less than 10(-9) A/mm and high ON/OFF drain current ratio of similar to 10(9), low on-state resistance of 1.84 m Omega.cm(2), and small subthreshold slope of 85 mV/decade.

引用

页码：175 / 177

页数：3

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