High Speed VCSELs for Optical Interconnects

被引：0

作者：

Larsson, A. ^{[1
]}

Gustavsson, J. S. ^{[1
]}

Haglund, A. ^{[1
]}

Bengtsson, J. ^{[1
]}

Kogel, B. ^{[1
]}

Westbergh, P. ^{[1
]}

Safaisini, R. ^{[1
]}

Haglund, E. ^{[1
]}

Szczerba, K. ^{[1
]}

Karlsson, M. ^{[1
]}

Andrekson, P. A. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, SE-41296 Gothenburg, Sweden

来源：

2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2013年

关键词：

Vertical cavity surface emitting lasers; modulation; dynamics; tuning; optical interconnections; PHOTON LIFETIME; 25; GBIT/S; TRANSMISSION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an overview of our recent work on high speed, oxide confined, 850 nm vertical cavity surface emitting lasers (VCSELs). With proper active region and cavity designs, and techniques for reducing capacitance and thermal impedance, we have reached a modulation bandwidth of 23 GHz and demonstrated 40 Gbps transmission. Using an integrated mode filter for reducing the spectral width we have extended the reach on multimode fiber at 25 Gbps from 100 to 500 m. Improved link capacity was also demonstrated using a more spectrally efficient multi-level modulation format (4-PAM). Finally, a MEMS-technology for wafer scale integration of tunable high speed VCSELs was developed, enabling a tuning range of 24 nm, a 6 GHz modulation bandwidth, and 5 Gbps transmission.

引用

页码：269 / 272

页数：4

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