Epitaxial GaAs layers by MOCVD process: Growth and characterization

被引：0

作者：

Modak, P ^{[1
]}

Hudait, MK ^{[1
]}

Krupanidhi, SB ^{[1
]}

机构：

[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA

来源：

SEMICONDUCTOR DEVICES | 1996年 / 2733卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：361 / 363

页数：3

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[41] LPE GROWTH OF ALGAINAS EPITAXIAL LAYERS ON GAAS(100) [J].

SWARUP, P ;

JAIN, RK ;

VERMA, SN ;

CHARAN, S ;

TANDLE, DM .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :97-104

[42] Epitaxial growth of GaAs thin layers on NiSb substrates [J].

S. A. Aitkhozhin ;

A. S. Artemov ;

P. S. Belousov ;

M. A. Bobylev ;

E. V. Kaevitser ;

V. E. Lyubchenko ;

K. P. Petrov ;

Yu. Sh. Temirov ;

S. B. Farafonov .

Inorganic Materials, 2015, 51 :83-87

[43] Epitaxial growth of GaAs thin layers on NiSb substrates [J].

Aitkhozhin, S. A. ;

Artemov, A. S. ;

Belousov, P. S. ;

Bobylev, M. A. ;

Kaevitser, E. V. ;

Lyubchenko, V. E. ;

Petrov, K. P. ;

Temirov, Yu Sh ;

Farafonov, S. B. .

INORGANIC MATERIALS, 2015, 51 (02) :83-87

[44] SPECTRAL SHIFT OF PHOTOLUMINESCENCE OF HIGHLY DOPED GaAs EPITAXIAL LAYERS GROWN BY MOCVD. [J].

Okamoto, Kotaro ;

Kurihara, Nobuaki .

Japanese Journal of Applied Physics, Part 2: Letters, 1987, 26 (11) :1763-1766

[45] Photoluminescence of Zn- and Si-doped GaAs epitaxial layers grown by MOCVD [J].

Hudait, MK ;

Modak, P ;

Hardikar, S ;

Rao, KSRK ;

Krupanidhi, SB .

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 :312-316

[46] DIFFUSION-MODEL FOR DEPOSITION OF EPITAXIAL GAAS-LAYERS PREPARED BY THE MOCVD METHOD [J].

LEITNER, J ;

VONKA, P ;

STEJSKAL, J ;

KLIMA, P ;

HLADINA, R .

COLLECTION OF CZECHOSLOVAK CHEMICAL COMMUNICATIONS, 1991, 56 (10) :2020-2029

[47] LP-MOCVD GROWTH OF CUALSE2 EPITAXIAL LAYERS [J].

CHICHIBU, S ;

IWAI, A ;

MATSUMOTO, S ;

HIGUCHI, H .

JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) :635-642

[48] In situ optical monitoring of the GaAs growth process in MOCVD [J].

Makimoto, Toshiki, 1600, (29)

[49] MOCVD growth and characterization of InNAs/GaAs quantum wells [J].

El-Emawy, ARA ;

Nuntawong, N ;

Cao, HJ ;

Zhmayev, E ;

Xu, HF ;

Osinski, M .

PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 :507-512

[50] Growth and characterization of CdS buffer layers by CBD and MOCVD [J].

Chang, CH ;

Morrone, AA ;

Stanbery, BJ ;

McCreary, C ;

Huang, M ;

Huang, CH ;

Li, SS ;

Anderson, TJ .

NCPV PHOTOVOLTAICS PROGRAM REVIEW: PROCEEDINGS OF THE 15TH CONFERENCE, 1999, 462 :114-119

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