Epitaxial GaAs layers by MOCVD process: Growth and characterization

被引：0
作者：
Modak, P [1 ]
Hudait, MK [1 ]
Krupanidhi, SB [1 ]
机构：
[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA
来源：
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
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D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
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页码：361 / 363
页数：3
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