Epitaxial GaAs layers by MOCVD process: Growth and characterization

被引：0

作者：

Modak, P ^{[1
]}

Hudait, MK ^{[1
]}

Krupanidhi, SB ^{[1
]}

机构：

[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA

来源：

SEMICONDUCTOR DEVICES | 1996年 / 2733卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：361 / 363

页数：3

共 50 条

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[40] Epitaxial growth and characterization of PbGeEuTe layers [J].

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