Epitaxial GaAs layers by MOCVD process: Growth and characterization

被引:0
作者
Modak, P [1 ]
Hudait, MK [1 ]
Krupanidhi, SB [1 ]
机构
[1] INDIAN INST SCI,MAT RES CTR,BANGALORE 560012,KARNATAKA,INDIA
来源
SEMICONDUCTOR DEVICES | 1996年 / 2733卷
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D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:361 / 363
页数:3
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