Electrical effect of titanium diffusion on amorphous indium gallium zinc oxide

被引：10

作者：

Choi, Seung-Ha ^{[1
,2
]}

Jung, Woo-Shik ^{[3
]}

Park, Jin-Hong ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Suwon 440746, South Korea

[2] Samsung Display, Dev Grp Oxide Semicond, Yongin 446711, South Korea

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

ELECTRONIC-STRUCTURE; SEMICONDUCTOR A-INGAZNO4-X; GERMANIDE; TRANSPORT; CONTACTS;

D O I：

10.1063/1.4768216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, thermal diffusion phenomenon of Ti into amorphous indium gallium zinc oxide (alpha-IGZO) was carefully investigated with secondary ion mass spectroscopy, I-V, and R-s measurement systems and HSC chemistry simulation tool. According to the experimental and simulated results, the diffused Ti atoms were easily oxidized due to its lowest oxidation free energy. Since oxygen atoms were decomposed from the alpha-IGZO during the oxidation of Ti, the number of oxygen vacancies working as electron-donating sites in alpha-IGZO was dramatically increased, contributing to the decrease of resistivity (rho) from 1.96 Omega cm (as-deposited alpha-IGZO) to 1.33 x 10(-3) Omega cm (350 degrees C annealed alpha-IGZO). VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768216]

引用

页数：3

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