Effect of controlled O2 impurities on N2 afterglows of RF discharges

被引:14
作者
Kang, Namjun [1 ]
Lee, Minwook [1 ]
Ricard, Andre [2 ,3 ]
Oh, Soo-ghee [1 ]
机构
[1] Ajou Univ, Div Energy Syst Res, Suwon 443749, South Korea
[2] Univ Toulouse, UPS, INPT, LAPLACE, F-31062 Toulouse, France
[3] CNRS, LAPLACE, F-31062 Toulouse, France
基金
新加坡国家研究基金会;
关键词
N-2-O-2 radio frequency discharges; Early afterglows; O-2 impurity into N-2; FLOWING AFTERGLOW; NO-BETA; NITROGEN; PRESSURE; ELECTRON; KINETICS; PLASMA;
D O I
10.1016/j.cap.2012.04.009
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A RF capacitive flowing discharge and post-discharge are experimentally studied in N-2 gas and N-2-(10(-4) -10(-2))O-2 gas mixtures by using the optical emission spectroscopy at a pressure of 8 Torr, a flow rate of 1 slm and a transmitted RF power of 100 W. In these conditions the flowing discharge is distinguished by early and late afterglow. It is shown that the early afterglow is very sensitive to small quantity of O-2. The band emissions from N-2(+)(B) and N-2(B,upsilon') decreased sharply in the early afterglow when O-2 is introduced before the plasma. By using simple gas kinetics for pseudo-stationary conditions in the afterglows, N-2(+) + O-2 charge transfer and N-2(a') quenching by O-2 play key roles in the afterglow. The charge transfers and quenching reactions are amplified when O-atoms are produced in the plasma. It is also observed that the O-atoms are produced in the early afterglow when O-2 is introduced after the plasma. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:1448 / 1453
页数:6
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