Pulse-induced resistive and capacitive switching in TiO2 thin film devices

被引：42
作者：
Salaoru, Iulia [1 ]
Khiat, Ali [1 ]
Li, Qingjiang [1 ,2 ]
Berdan, Radu [3 ]
Prodromakis, Themistoklis [1 ,3 ]
机构：
[1] Univ Southampton, Sch Elect & Comp Sci, Nano Res Grp, Southampton Nanofabricat Ctr, Southampton SO17 1BJ, Hants, England
[2] Natl Univ Def Technol, Coll Elect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[3] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, Circuits & Syst Grp, London SW7 2AZ, England
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 23期
基金：
英国工程与自然科学研究理事会;
关键词：
ELECTRICAL-PROPERTIES; MEMRISTIVE DEVICES; MEMCAPACITORS; STDP;
D O I：
10.1063/1.4840316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film. (C) 2013 AIP Publishing LLC.
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页数：4
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