A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

被引：23
作者：
Feruglio, Sylvain [1 ]
Lu, Guo-Neng [2 ]
Garda, Patrick [1 ]
Vasilescu, Gabriel [3 ]
机构：
[1] Univ Paris 06, SYEL BC 252, F-75252 Paris 05, France
[2] Univ Lyon 1, CNRS, UMR5270, INL, F-69622 Villeurbanne, France
[3] City Univ London, DEEIE, UNESCO Chair, London EC1V 0HB, England
来源：
SENSORS | 2008年 / 8卷 / 10期
关键词：
Buried Double Junction photodetector; CMOS Image Sensor;
D O I：
10.3390/s8106566
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
引用
收藏
页码：6566 / 6594
页数：29
相关论文
共 110 条
[1]   Analysis of n(+)p silicon junctions with varying substrate doping concentrations made under ultraclean processing technology [J].
Aharoni, H ;
Ohmi, T ;
Oka, MM ;
Nakada, A ;
Tamai, Y .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) :1270-1288
[2]  
ALASSIR M, 2008, EURASIP J EMB SYST, P733
[3]   Two dimensional model for lateral photodiode [J].
Alexandre, A. ;
Dadouche, F. ;
Garda, P. .
IEEE DTIS: 2006 INTERNATIONAL CONFERENCE ON DESIGN & TEST OF INTEGRATED SYSTEMS IN NANOSCALE TECHNOLOGY, PROCEEDINGS, 2006, :294-298
[4]  
Alexandre A, 2000, 2000 INTERNATIONAL CONFERENCE ON MODELING AND SIMULATION OF MICROSYSTEMS, TECHNICAL PROCEEDINGS, P189
[5]   Modeling and simulation under SPICE of optoelectronic systems including BDJ detector [J].
Alexandre, A ;
Sedjil, M ;
Ben Chouikha, M ;
Alquié, G .
DESIGN,TEST INTEGRATION, AND PACKAGING OF MEMS/MOEMS 2001, 2001, 4408 :138-146
[6]   Modeling and design of multi buried junctions detectors for color systems development [J].
Alexandre, A ;
Sou, G ;
BenChouikha, M ;
Sedjil, M ;
Lu, GN ;
Alquié, G .
DESIGN, TEST, INTEGRATION, AND PACKAGING OF MEMS/MOEMS, PROCEEDINGS, 2000, 4019 :288-298
[7]  
ALEXANDRE A, 1999, OHD C BES FRANC SEPT
[8]  
ALEXANDRE A, 2004, MODELING SIMULATION
[9]  
ALEXANDRE A, 1998, C INT INSTR PAR FRAN, P403
[10]   A CMOS linear array of BDJ color detectors [J].
Ben Chouikha, M ;
Lu, GN ;
Sedjil, M ;
Sou, G .
ADVANCED FOCAL PLANE ARRAYS AND ELECTRONIC CAMERAS II, 1998, 3410 :46-53
12345678910