Organic light emitting bistable memory device with high on/off ratio and low driving voltage

被引：19

作者：

Kim, Sung Hyun ^{[2
]}

Yook, Kyoung Soo ^{[1
]}

Lee, Jun Yeob ^{[1
]}

Jang, Jyongsik ^{[2
]}

机构：

[1] Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, Kyeonggi Do, South Korea

[2] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2964178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic light emitting bistable memory devices (OLEBDs) with a dual function of organic light emitting diodes and organic memory devices were developed by using 0.5 nm thick MoO3 as an interlayer between hole injection layer and hole transport layer. The hole transport unit with MoO3 interlayer played a role of a memory unit as well as a hole transport unit. High on/off ratio over 1000 was obtained at a reading voltage of 1 V and driving voltage was lowered by MoO3. In addition, two different luminances were obtained at the same driving voltage by changing writing voltage of OLEBDs. (C) 2008 American Institute of Physics.

引用

页数：3

共 23 条

[1] Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles
Bozano, LD
Kean, BW
Beinhoff, M
Carter, KR
Rice, PM
Scott, JC
[J]. ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (12) : 1933 - 1939
[2] Negative differential resistance effect in organic devices based on an anthracene derivative
Chen, Jiangshan
Xu, Liling
Lin, Jian
Geng, Yanhou
Wang, Lixiang
Ma, Dongge
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
[3] Single-layer organic memory devices based on N,N′-di(naphthalene-l-yl)-N,N′-diphenyl-benzidine -: art. no. 023505
Chen, JS
Ma, DG
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (02)
[4] Switchable organic electroluminescence
Gao, XC
Zou, DC
Fujita, K
Tsutsui, T
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4508 - 4510
[5] Ikeda H., 2006, SID INT S DIGTECHNOL, V37, P923, DOI [10.1889/1.2433672, DOI 10.1889/1.2433672]
[6] Memory effect from charge trapping in layered organic structures
Kang, SH
Crisp, T
Kymissis, I
Bulovic, V
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4666 - 4668
[7] Stable, three layered organic memory devices from C60 molecules and insulating polymers
Kanwal, Alokik
Chhowalla, Manish
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (20)
[8] KIM SK, UNPUB
[9] Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
Lai, YS
Tu, CH
Kwong, DL
Chen, JS
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (12) : 1 - 3
[10] Multilevel conductance switching in polymer films
Lauters, M.
McCarthy, B.
Sarid, D.
Jabbour, G. E.
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (01)

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