Highly strained InxGa1-xGaAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 μm spectral range

被引：3

作者：

Jourba, S ^{[1
]}

Gendry, I ^{[1
]}

Regreny, P ^{[1
]}

Hollinger, G ^{[1
]}

机构：

[1] Ecole Cent Lyon, Elect Lab, LEAME, UMR CNRS 5512, F-69131 Ecully, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

InGaAs InP; strained quantum wells; SSMBE; photoluminescence;

D O I：

10.1016/S0022-0248(98)01535-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-quality pseudomorphic InP/InxGa1-xAs/InP (x = 0.85, 0.90) quantum wells have been grown by solid source molecular beam epitaxy using As and P valved cracking cells under standard growth conditions. Photoluminescence measurements at 77 and 300 K were used to characterize the optoelectronic quality of the films and the maximum operating wavelength. Promoting a 3D growth mode allows to extend the operating wavelength at 300 K up to similar to 2.3 mu m (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1101 / 1104

页数：4

共 10 条

[1] INGAAS/INGAASP/INP STRAINED-LAYER QUANTUM-WELL LASERS AT SIMILAR-TO-2-MU-M [J].

FOROUHAR, S ;

KSENDZOV, A ;

LARSSON, A ;

TEMKIN, H .

ELECTRONICS LETTERS, 1992, 28 (15) :1431-1432

[2]

Gendry M., 1995, Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications, P572

[3] Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001) [J].

Gendry, M ;

Grenet, G ;

Robach, Y ;

Krapf, P ;

Porte, L ;

Hollinger, G .

PHYSICAL REVIEW B, 1997, 56 (15) :9271-9274

[4] GROWTH OF STRAINED INAS/INP QUANTUM-WELLS BY MOLECULAR-BEAM EPITAXY [J].

HOPKINSON, M ;

DAVID, JPR ;

CLAXTON, PA ;

KIGHTLEY, P .

APPLIED PHYSICS LETTERS, 1992, 60 (07) :841-843

[5]

JOURBA S, UNPUB

[6] Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength [J].

Mitsuhara, M ;

Ogasawara, M ;

Oishi, M ;

Sugiura, H .

APPLIED PHYSICS LETTERS, 1998, 72 (24) :3106-3108

[7] Growth of strained InGaAs layers on InP substrates [J].

Okada, T ;

Weatherly, GC ;

McComb, DW .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2185-2196

[8] REDUCTION OF DARK CURRENT IN PHOTODIODES BY THE USE OF A RESONANT-CAVITY [J].

SVERDLOV, BN ;

BOTCHKAREV, AE ;

TERAGUCHI, N ;

SALVADOR, AA ;

MORKOC, H .

ELECTRONICS LETTERS, 1993, 29 (11) :1019-1021

[9] CRITICAL LAYER THICKNESS IN STRAINED GA1-XINXAS/INP QUANTUM WELLS [J].

TEMKIN, H ;

GERSHONI, DG ;

CHU, SNG ;

VANDENBERG, JM ;

HAMM, RA ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1668-1670

[10] VIRTUAL-SURFACTANT EPITAXY OF INAS QUANTUM-WELLS [J].

TOURNIE, E ;

BRANDT, O ;

GIANNINI, C ;

PLOOG, KH ;

HOHENSTEIN, M .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :765-769

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