Spectral diffusion and its influence on the emission linewidths of site-controlled GaN nanowire quantum dots

被引：52

作者：

Holmes, M. ^{[1
]}

Kako, S. ^{[2
]}

Choi, K. ^{[1
]}

Arita, M. ^{[1
]}

Arakawa, Y. ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 11期

关键词：

SPECTROSCOPY; PHOTOLUMINESCENCE; ALXGA1-XN; VACANCIES; EXCITONS; ALGAN; TIME;

D O I：

10.1103/PhysRevB.92.115447

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fourier transform spectroscopy is used to determine/control the degree of spectral diffusion in high-quality site-controlled GaN nanowire quantum dots. Detailed analysis, including the development of a statistical model and Monte Carlo simulations, provides evidence that the broadening is caused by photoinduced excitation of defects. Furthermore, performing the experiment under weak excitation allows for an estimate of the homogeneous linewidth to be made (135 mu eV). The origins of this linewidth are discussed, and the existence of an alternate dephasing mechanism is inferred. A limit on the emission linewidth at zero excitation is also discussed.

引用

收藏

页数：7

相关论文

共 53 条

[1] Low threshold, room-temperature microdisk lasers in the blue spectral range [J].

Aharonovich, Igor ;

Woolf, Alexander ;

Russell, Kasey J. ;

Zhu, Tongtong ;

Niu, Nan ;

Kappers, Menno J. ;

Oliver, Rachel A. ;

Hu, Evelyn L. .

APPLIED PHYSICS LETTERS, 2013, 103 (02)

[2]

[Anonymous], 2007, DISCRETE MULTIVARIAT, DOI DOI 10.1007/978-0-387-72806-3_6

[3] Photoluminescence of single GaN/AlN hexagonal quantum dots on Si(111): Spectral diffusion effects [J].

Bardoux, R. ;

Guillet, T. ;

Lefebvre, P. ;

Taliercio, T. ;

Bretagnon, T. ;

Rousset, S. ;

Gil, B. ;

Semond, F. .

PHYSICAL REVIEW B, 2006, 74 (19)

[4] Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot [J].

Berthelot, A. ;

Favero, I. ;

Cassabois, G. ;

Voisin, C. ;

Delalande, C. ;

Roussignol, Ph. ;

Ferreira, R. ;

Gerard, J. M. .

NATURE PHYSICS, 2006, 2 (11) :759-764

[5] Acoustic phonon broadening mechanism in single quantum dot emission [J].

Besombes, L ;

Kheng, K ;

Marsal, L ;

Mariette, H .

PHYSICAL REVIEW B, 2001, 63 (15)

[6] nextnano: General purpose 3-D simulations [J].

Birner, Stefan ;

Zibold, Tobias ;

Andlauer, Till ;

Kubis, Tillmann ;

Sabathil, Matthias ;

Trellakis, Alex ;

Vogl, Peter .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2137-2142

[7] Ultralong dephasing time in InGaAs quantum dots [J].

Borri, P ;

Langbein, W ;

Schneider, S ;

Woggon, U ;

Sellin, RL ;

Ouyang, D ;

Bimberg, D .

PHYSICAL REVIEW LETTERS, 2001, 87 (15) :157401-157401

[8] Size-dependent photoconductivity in MBE-grown GaN-nanowires [J].

Calarco, R ;

Marso, M ;

Richter, T ;

Aykanat, AI ;

Meijers, R ;

Hart, AV ;

Stoica, T ;

Luth, H .

NANO LETTERS, 2005, 5 (05) :981-984

[9] Characterization of vacancy-type defects in heteroepitaxial GaN grown by low-energy plasma-enhanced vapor phase epitaxy [J].

Calloni, A. ;

Ferragut, R. ;

Dupasquier, A. ;

von Kaenel, H. ;

Guiller, A. ;

Rutz, A. ;

Ravelli, L. ;

Egger, W. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (02)

[10] Strong exciton confinement in site-controlled GaN quantum dots embedded in nanowires [J].

Choi, Kihyun ;

Kako, Satoshi ;

Holmes, Mark J. ;

Arita, Munetaka ;

Arakawa, Yasuhiko .

APPLIED PHYSICS LETTERS, 2013, 103 (17)

← 1 2 3 4 5 6 →