Asymmetry to symmetry transition of Fano line-shape: analytical description

被引：24
作者：
Kumar, R. [1 ]
机构：
[1] Indian Inst Technol, Discipline Phys Sch Basic Sci, Indore 452017, Madhya Pradesh, India
来源：
INDIAN JOURNAL OF PHYSICS | 2013年 / 87卷 / 01期
关键词：
Electron-phonon interaction; Raman lineshape; Fano line-shape; P-TYPE SI; RAMAN-SCATTERING; DOPED SILICON; QUANTUM INTERFERENCE; EXCITATIONS; RESONANCE; MODES; BORON; GE;
D O I：
10.1007/s12648-012-0183-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
An analytical description of Fano line-shape asymmetry ratio has been presented here for a general case. It is shown that Fano line-shape becomes less asymmetric as |q| is increased and finally becomes completely symmetric in the limiting condition of q equal to infinity. Asymmetry ratios of Fano line-shapes have been calculated and are found to be in good consonance with the reported expressions for asymmetry ratio as a function of Fano parameter. Application of this derivation is also mentioned for explanation of asymmetry to symmetry transition of Fano line-shape in quantum confined silicon nanostructures.
引用
收藏
页码：49 / 52
页数：4
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