Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSIFET devices

被引：26

作者：

Wenger, Ch. ^{[1
]}

Lukosius, M. ^{[1
]}

Costina, I. ^{[1
]}

Sorge, R. ^{[1
]}

Dabrowski, J. ^{[1
]}

Muessig, H.-J. ^{[1
]}

Pasko, S. ^{[2
]}

Lohe, Ch. ^{[2
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

[2] AIXTRON AG, D-52072 Aachen, Germany

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 08期

关键词：

high-k; HfO2; gate-last; AVD; TiN;

D O I：

10.1016/j.mee.2008.05.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2 films were grown by atomic vapour deposition (AVD) on SiO2/Si (100) substrates. The positive shift of the flat band voltage of the HfO2 based metal-oxide-silicon (MOS) devices indicates the presence of negative fixed charges with a density of 5 x 10(12) cm(-2). The interface trap charge density of HfO2/SiO2 stacks can be reduced to 3 x 10(11) eV(-1) cm(-2) near mid gap, by forming gas annealing. The extracted work function of 4.7 eV preferred the use of TiN as metal gate for PMOS transistors. TiN/HfO2/SiO2 gate stacks were integrated into gate-last-formed MCSFET structures. The extracted maximum effective mobility of HfO2 based PMOS transistors is 56 cm(2)/VS. (C) 2008 Elsevier B.V. All rights reserved.

引用

收藏

页码：1762 / 1765

页数：4

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