Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures

被引：20

作者：

Lin, ZJ ^{[1
]}

Lu, W

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[2] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 01期

关键词：

D O I：

10.1063/1.2158137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of Ni Schottky contact area on two-dimensional electron-gas (2DEG) sheet carrier concentration of strained AlGaN/GaN heterostructures has been investigated by depositing different areas of Ni Schottky contact on the structure. With the measured capacitance-voltage (C-V) curves, the 2DEG sheet carrier concentrations with different Ni Schottky contact areas were calculated. It is shown that with the increased area of Ni Schottky contact on strained AlGaN/GaN heterostructures, the 2DEG sheet carrier concentration is decreased, and when the area of Ni Schottky contact is increased to some extent, the decreased 2DEG sheet carrier concentration tends to be constant. A hypothetic model of the interaction among the electrons of Ni Schottky metal, the surface donor states of AlGaN barrier layer, and 2DEG electrons in strained AlGaN/GaN heterostructures is proposed to explain the above results. The current-voltage (I-V) characteristics for the different areas of Ni Schottky contact confirm the results obtained by C-V characteristics.

引用

页数：3

共 8 条

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