Restraining the Band Fluctuation of CBD-Zn(O,S) Layer: Modifying the Hetero-Junction Interface for High Performance Cu2ZnSnSe4 Solar Cells With Cd-Free Buffer Layer

被引：45

作者：

Li, Jianjun ^{[1
,2
]}

Liu, Xiaoru ^{[1
]}

Liu, Wei ^{[1
]}

Wu, Li ^{[3
]}

Ge, Binghui ^{[4
]}

Lin, Shuping ^{[1
]}

Gao, Shoushuai ^{[1
]}

Zhou, Zhiqiang ^{[1
]}

Liu, Fangfang ^{[1
]}

Sun, Yun ^{[1
]}

Ao, Jianping ^{[1
]}

Zhu, Hongbing ^{[2
]}

Mai, Yaohua ^{[2
]}

Zhang, Yi ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China

[2] Jinan Univ, Inst New Energy Technol, Guangzhou 510632, Guangdong, Peoples R China

[3] Nankai Univ, Coll Phys, Tianjin 300071, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

来源：

SOLAR RRL | 2017年 / 1卷 / 10期

基金：

中国国家自然科学基金;

关键词：

kesterite solar cells; Zn(O; S); Cd-free buffer layers; hetero-junction interfaces; band fluctuation; SPUTTERED ZN(O; S); THIN-FILMS; IMPACT;

D O I：

10.1002/solr.201700075

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Zn(O,S) film is a promising low-cost and environment-friendly Cd-free buffer layer for chalcopyrite and kesterite thin film solar cells. However, the devices with Zn(O,S) buffer layer usually suffer from poor interface performance, resulting in a much lower efficiency, especially for kesterite solar cells. Here, the band fluctuation caused by ZnO secondary phase in Zn(O,S) layer is identified as the main reason deteriorating the device performance. By a concentrated ammonium etching and subsequent soft annealing treatment, the detrimental ZnO and Zn(OH)(2) secondary phases are eliminated from the Zn(O,S) layer and the hetero-junction performance is improved significantly. Consequently, the power conversion efficiency of the Zn(O,S)/CZTSe solar cells was improved from 1.17% to a favorable value of 7.2%. Temperature dependent J-V properties reveal a defect level assisted charge carrier transport mechanism across the Zn(O,S)/CZTSe interface. These encouraging results imply that Zn(O,S) buffer layer is a promising substitution for toxic CdS in future manufacturing of high performance thin film solar cells.

引用

页数：9

共 28 条

[1] The electronic structure of the [Zn(S,O)/ZnS]/CuInS2 heterointerface -: Impact of post-annealing [J].

Baer, M. ;

Ennaoui, A. ;

Klaer, J. ;

Saez-Araoz, R. ;

Kropp, T. ;

Weinhardt, L. ;

Heske, C. ;

Schock, H. -W. ;

Fischer, Ch. -H. ;

Lux-Steiner, M. C. .

CHEMICAL PHYSICS LETTERS, 2006, 433 (1-3) :71-74

[2] Cd-free buffer layer materials on Cu2ZnSn(SxSe1-x)4: Band alignments with ZnO, ZnS, and In2S3 [J].

Barkhouse, D. Aaron R. ;

Haight, Richard ;

Sakai, Noriyuki ;

Hiroi, Homare ;

Sugimoto, Hiroki ;

Mitzi, David B. .

APPLIED PHYSICS LETTERS, 2012, 100 (19)

[3]

Chirila A, 2013, NAT MATER, V12, P1107, DOI [10.1038/NMAT3789, 10.1038/nmat3789]

[4] An experimentally supported model for the origin of charge transport barrier in Zn(O,S)/CIGSSe solar cells [J].

Chua, Rou Hua ;

Li, Xianglin ;

Walter, Thomas ;

Teh, Lay Kuan ;

Hahn, Thomas ;

Hergert, Frank ;

Mhaisalkar, Subodh ;

Wong, Lydia Helena .

APPLIED PHYSICS LETTERS, 2016, 108 (04)

[5] Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers [J].

Gautron, E. ;

Buffiere, M. ;

Harel, S. ;

Assmann, L. ;

Arzel, L. ;

Brohan, L. ;

Kessler, J. ;

Barreau, N. .

THIN SOLID FILMS, 2013, 535 :175-179

[6] Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)4-based solar cells [J].

Grenet, Louis ;

Grondin, Pauline ;

Coumert, Karol ;

Karst, Nicolas ;

Emieux, Fabrice ;

Roux, Frederic ;

Fillon, Raphael ;

Altamura, Giovanni ;

Fournier, Helene ;

Faucherand, Pascal ;

Perraud, Simon .

THIN SOLID FILMS, 2014, 564 :375-378

[7] Sputtered Zn(O,S) for junction formation in chalcopyrite-based thin film solar cells [J].

Grimm, A. ;

Just, J. ;

Kieven, D. ;

Lauermann, I. ;

Palm, J. ;

Neisser, A. ;

Rissom, T. ;

Klenk, R. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (5-6) :109-111

[8] New reaction kinetics for a high-rate chemical bath deposition of the Zn(S,O) buffer layer for Cu(In,Ga)Se2-based solar cells [J].

Hariskos, Dimitrios ;

Menner, Richard ;

Jackson, Philip ;

Paetel, Stefan ;

Witte, Wolfram ;

Wischmann, Wiltraud ;

Powalla, Michael ;

Buerkert, Linda ;

Kolb, Torsten ;

Oertel, Mike ;

Dimmler, Bernhard ;

Fuchs, Bettina .

PROGRESS IN PHOTOVOLTAICS, 2012, 20 (05) :534-542

[9] Thin-film solar cells: Device measurements and analysis [J].

Hegedus, SS ;

Shafarman, WN .

PROGRESS IN PHOTOVOLTAICS, 2004, 12 (2-3) :155-176

[10] Effects of heavy alkali elementsin Cu(In,Ga)Se2 solar cells with efficiencies up to 22.6% [J].

Jackson, Philip ;

Wuerz, Roland ;

Hariskos, Dimitrios ;

Lotter, Erwin ;

Witte, Wolfram ;

Powalla, Michael .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (08) :583-586

← 1 2 3 →