Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

被引：47

作者：

Khan, M. Ajmal ^{[1
]}

Saito, T. ^{[1
]}

Nakamura, K. ^{[1
]}

Baba, M. ^{[1
]}

Du, W. ^{[1
]}

Toh, K. ^{[1
]}

Toko, K. ^{[1
]}

Suemasu, T. ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

THIN SOLID FILMS | 2012年 / 522卷

关键词：

Barium silicide; Molecular beam epitaxy; Impurity doping; Solar cells; DEPTH PROFILES; COULOMB GAP; THIN-FILMS; CU; SUBSTRATE; AL;

D O I：

10.1016/j.tsf.2012.09.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carrier concentrations and mobilities of impurity (Sb, In, Ga, Al, Ag, and Cu)-doped BaSi2 films grown by molecular beam epitaxy on highly resistive n-or p-Si(111) substrates were measured at room temperature using the van der Pauw technique. Sb-, Ga- and Cu-doped BaSi2 exhibited n-type conductivity, while InAl- and Ag-doped BaSi2 exhibited p-type conductivity. The temperature dependence of resistivity indicated that the carrier transport in Ga-, Al-, Ag-, and Cu-doped BaSi2 is well explained by both Shklovskii-Efros-type and Mott-type variable range hopping conduction. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：95 / 99

页数：5

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