Tuning the electrons at the LaAlO3/SrTiO3 interface: From growth to beyond growth

被引：8
作者：
Xie Yan-Wu [1 ,2 ]
Harold, Hwang Y. [1 ,2 ]
机构：
[1] Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
[2] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
来源：
CHINESE PHYSICS B | 2013年 / 22卷 / 12期
关键词：
LaAlO3/SrTiO3; strontium titanate; oxides; two-dimensional electron gas; interface; OXIDE HETEROINTERFACE; MOBILITY; GAS; SUPERCONDUCTIVITY; CONDUCTION; FERROMAGNETISM; COEXISTENCE; CHARGE; SRTIO3;
D O I：
10.1088/1674-1056/22/12/127301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Recently, the quasi-two-dimensional electron gas (q2DEG) confined at the interface between LaAlO3 and SrTiO3 has attracted significant attention. In this paper, we briefly review experimental methods that have been used to tune the carrier density and mobility of this q2DEG. These methods can be classified into two categories: growth-related tuning (i.e. substrate, growth temperature, oxygen pressure, post-annealing, LaAlO3 thickness, stoichiometry, and capping layers) and post-growth tuning (i.e. electrostatic field gating, conductive atomic force microscopy and surface adsorbates). Taken together, these methods enable the broad tuning of the electronic properties of this interface.
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页数：9
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