Structural relation and epitaxial properties of hexagonal InN and oxidized cubic In2O3

被引：26
作者：
Hur, TB
Lee, IJ
Park, HL
Hwang, YH
Kim, HK
机构：
[1] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
[3] Pohang Univ Sci & Technol, PLS, PAL, Pohang 790784, Kyungbuk, South Korea
[4] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 130卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
epitaxial film; indium nitride; X-ray scattering;
D O I：
10.1016/j.ssc.2004.02.031
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The epitaxial properties and strutural relation between hexagonal InN and Cubic In2O3 phases were studied by synchrotron X-ray scattering and X-ray photoelectron spectroscopy. The Cubic bixbyite In2O3 phase on the sapphire(0001) substrate was formed after an annealing time of 10 min at 10(-5), Torr after the hexagonal InN film was grown at 550 degreesC, above the dissociation temperature of InN, by RF-magnetron sputtering. The crystal orientation was Cubic In2O3(222), parallel to Al2O3(0001) and parallel to hexagaonal InN(0002) before the oxidation process. The Cubic In2O3 phase was believed to be formed layer by layer by the oxidation of the hexagonal InN phase. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：397 / 400
页数：4
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