Photoreflectance of GaAs structures with a Mn δ-doped layer

被引：6

作者：

Komkov, O. S. ^{[1
]}

Dokichev, R. V. ^{[1
]}

Kudrin, A. V. ^{[2
]}

Danilov, Yu. A. ^{[2
]}

机构：

[1] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

[2] Lobachevsky State Univ Nizhni Novgorod, Nizhni Novgorod Res Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2013年 / 39卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY; ELECTRIC-FIELD; QUANTUM-WELLS;

D O I：

10.1134/S1063785013110199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strength of the built-in electric field in gallium-arsenide structures with a delta-doped layer has been determined by photomodulation optical spectroscopy (photoreflectance) for different manganese contents in these structures. The samples under study have been grown by combining metal-organic chemical vapor deposition and laser sputtering of Mn and GaAs targets at a low temperature (T (g) = 400A degrees C). An increase in the Mn content in the delta-doped layer from zero to 0.35 monolayer leads to an increase in the built-in electric field (averaged over the surface region) from 14 to 25 kV/cm. The data obtained are in good agreement with the results of self-consistent solution of the Schrodinger and Poisson equations for the real (manganese) distribution profile.

引用

页码：1008 / 1011

页数：4

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