Thick nonpolar m-plane and semipolar (10(1)over-bar(1)over-bar) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

被引：5

作者：

Iso, Kenji ^{[1
]}

Matsuda, Karen ^{[1
]}

Takekawa, Nao ^{[1
]}

Hikida, Kazuhiro ^{[1
]}

Hayashida, Naoto ^{[1
]}

Murakami, Hisashi ^{[1
]}

Koukitu, Akinori ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Dept Appl Chem, 2-24-16 Naka Cho, Koganei, Tokyo 1848588, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 461卷

关键词：

Substrates; Hydride vapor-phase epitaxy; Nitrides; Semiconducting III-V materials; HVPE;

D O I：

10.1016/j.jcrysgro.2017.01.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN layers of thickness 0.5-1.3 mm were grown at 1280 degrees C at a growth rate of 95-275 [mu m/h by tri-halide vapor-phase epitaxy on nonpolar m-plane (10 (1) over bar0) and semipolar (10 (1) over bar(1) over bar) ammonothermal GaN substrates. For nonpolar m-plane (10 (1) over bar0) with a -5 degrees off -angle, the full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) and the basal plane stacking fault (BSF) density increased from 50 to 178" and from 4.8x10(1) to 1.0x10(3) cm(-1), respectively, upon increasing the growth rate from 115 to 245 mu m/h. On the other hand, the XRC-FWHM and the BSF density for semipolar (10 (1) over bar(1) over bar) grown at 275 mu m/h were as small as 28" and 8.3x10(1) cm(-1), respectively.

引用

页码：25 / 29

页数：5

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