Si-containing block copolymers for self-assembled nanolithography

被引:77
|
作者
Ross, C. A. [1 ]
Jung, Y. S. [1 ]
Chuang, V. P. [1 ]
Ilievski, F. [1 ]
Yang, J. K. W. [2 ]
Bita, I. [1 ]
Thomas, E. L. [1 ]
Smith, Henry I. [2 ]
Berggren, K. K. [2 ]
Vancso, G. J. [3 ]
Cheng, J. Y. [4 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[3] Univ Twente, MESA Res Inst, NL-7500 Enschede, Netherlands
[4] IBM Almaden Res Ctr, San Jose, CA USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 06期
基金
美国国家科学基金会;
关键词
etching; nanolithography; nanopatterning; polymer blends; polymer films; self-assembly; silicon compounds;
D O I
10.1116/1.2981079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing for self-assembled lithography because of the high etch contrast between the blocks, the high etch resistance of the Si-containing block, and the high Flory-Huggins interaction parameter, which is expected to minimize line edge roughness. The locations and long range order of the microdomains can be controlled using shallow topographical features. Pattern generation from poly(styrene)-poly(ferrocenyldimethylsilane) and poly(styrene)-poly(dimethylsiloxane) block copolymers, and the subsequent pattern transfer into metal, oxide, and polymer films, is described.
引用
收藏
页码:2489 / 2494
页数:6
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