Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

被引：20

作者：

Posilovic, K. ^{[1
]}

Kettler, T. ^{[1
]}

Shchukin, V. A. ^{[1
]}

Ledentsov, N. N. ^{[1
]}

Pohl, U. W. ^{[1
]}

Bimberg, D. ^{[1
]}

Fricke, J. ^{[2
]}

Ginolas, A. ^{[2
]}

Erbert, G. ^{[2
]}

Traenkle, G. ^{[2
]}

Joensson, J. ^{[3
]}

Weyers, M. ^{[3
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

[3] Three Five Epitaxial Serv AG, TESAG, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

aluminium compounds; brightness; gallium arsenide; III-V semiconductors; laser beams; laser modes; photonic crystals; semiconductor lasers;

D O I：

10.1063/1.3040322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum efficiencies of 93% and very narrow vertical beam divergence of 7.1 degrees (full width at half maximum). 50 mu m broad area lasers with unpassivated facets exhibit a high total output power of nearly 20 W in pulsed mode with a divergence of 9.5 degrees x11.3 degrees leading to a record brightness of 3x10(8) W cm(-2) sr(-1), being presently the best value ever reported for a single broad area laser diode. 100 mu m broad devices with unpassivated facets show continuous wave operation with an output power of 1.9 W.

引用

页数：3

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