The SiGeSn approach towards Si-based lasers

被引：10

作者：

Sun, G. ^{[1
]}

Yu, S. -Q. ^{[2
]}

机构：

[1] Univ Massachusetts, Boston, MA 02125 USA

[2] Univ Arkansas, Fayetteville, AR 72701 USA

来源：

SOLID-STATE ELECTRONICS | 2013年 / 83卷

关键词：

Si based laser; group-IV; GeSn alloy; SiGeSn alloy; GROUP-IV SEMICONDUCTORS; INTERSUBBAND ELECTROLUMINESCENCE; ROOM-TEMPERATURE; OPERATION;

D O I：

10.1016/j.sse.2013.01.037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Approaches using lattice-matched heterostructures consisting of group-IV elements - Si, Ge, Sn and their alloys, are proposed for the development of Si-based lasers that can be monolithically integrated on Si substrate. All proposed laser structures can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Designs of double heterostructure, multiple quantum well, and quantum cascade lasers are presented. (c) 2013 Elsevier Ltd. All rights reserved.

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页码：76 / 81

页数：6

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